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6AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
* Low on-resistance N-channel: RDS(on) 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) 0.2 , VGS = -10 V, I D = -2.5 A * Capable of 4 V gate drive * Low drive current * High speed switching * High density mounting * Suitable for H-bridged motor driver * Discrete packaged devices of same die: N-channel: 2SK970, 2SK1093 P-channel: 2SJ172, 2SJ175
6AM11
Outline
Absolute Maximum Ratings (Ta = 25C) (1 Unit)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25C)* Pch* Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 6 Device Operation Tch Tstg
2 2 1
Nch 60 20 5 20 5 36 4.8 150
Pch -60 20 -5 -20 -5
Unit V V A A A W W C C
-55 to +150
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6AM11
Electrical Characteristics (Ta = 25C) (1 Unit)
N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.7 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.13 0.18 4.5 400 220 60 5 30 170 75 1.0 100 Max -- -- 10 250 2.0 0.17 0.24 -- -- -- -- -- -- -- -- -- -- P channel Min -60 20 -- -- -1.0 -- -- 2.7 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.15 0.20 5.0 900 460 130 8 35 180 85 -1.0 170 Max -- -- 10 Unit V V A Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V*1 I D = 2.5 A, VGS = 4 V*1 I D = 2.5 A, VDS = 10 V*1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain I DSS current Gate to source cutoff voltage VGS(off)
-250 A -2.0 0.2 0.27 -- -- -- -- -- -- -- -- -- -- V S pF pF pF ns ns ns ns V ns
Static drain to source on RDS(on) state resistance
I D = 2.5 A, VGS = 10 V, RL = 12
I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF/dt = 50 A/s
1. Pulse Test Polarity of test conditions for P channel device is reversed.
Pch: See characteristic curves of 2SJ172
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